SS8050 Y1

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SS8050 TRANSISTOR (NPN) SOT-23 FEATURES Complimentary to SS8550 1. BASE 2. EMITTER 3. COLLECTOR MARKING: Y1 Y1=Device code Solid dot = Green molding compound device,if none,the normal device. MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector Current 1.5 A PC Collector Power Dissipation 300 mW Thermal Resistance From Junction To Ambient 417 ℃/W RΘJA TJ,Tstg Operation Junction and Storage Temperature Range -55～+150 ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC= 100μA, IE=0 40 V Collector-emitter breakdown voltage V(BR)CEO IC= 0.1mA, IB=0 25 V Emitter-base breakdown voltage V(BR)EBO IE=100μA, IC=0 5 V Collector cut-off current ICBO VCB=40V, IE=0 0.1 μA Collector cut-off current ICEO VCE=20V, IE=0 0.1 μA Emitter cut-off current IEBO VEB= 5V, IC=0 0.1 μA hFE(1) VCE=1V, IC= 100mA 120 hFE(2) VCE=1V, IC= 800mA 40 400 DC current gain Collector-emitter saturation voltage VCE(sat) IC=800mA, IB= 80mA 0.5 V Base-emitter saturation voltage VBE(sat) IC=800mA, IB= 80mA 1.2 V fT Transition frequency VCE=10V, IC= 50mA 100 MHz f=30MHz CLASSIFICATION OF hFE(1) Rank Range www.jscj-elec.com L H J 120-200 200-350 300-400 1 Rev. - 2.1 Typical Characteristics hFE Static Characteristic 140 1000 hFE Ta=100℃ 400uA 100 DC CURRENT GAIN (mA) IC COLLECTOR CURRENT 450uA 350uA 80 300uA 250uA 60 200uA 40 IC COMMON EMITTER VCE=1V COMMON EMITTER Ta=25℃ 500uA 120 —— 150uA 300 Ta=25℃ 100 30 100uA 20 IB=50uA 0 0.0 10 0.5 1.0 1.5 2.0 COLLECTOR-EMITTER VOLTAGE VCEsat VCE 2.5 1 VBEsat IC —— 100 30 COLLECTOR CURRENT 1000 1500 300 IC (mA) IC —— 1.2 1000 300 BASE-EMITTER SATURATION VOLTAGE VBEsat (V) COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) 10 3 (V) Ta=100℃ 100 Ta=25℃ 30 10 1.0 Ta=25℃ 0.8 Ta=100℃ 0.6 0.4 3 β=10 β=10 1 0.2 1 10 3 100 30 COLLECTOR CURRENT VBE 300 IC 1000 1500 1 30 10 3 (mA) 100 COLLECTOR CURRENT —— IC Cob/ Cib 200 1500 1000 (mA) IC —— VCB/ VEB f=1MHz IE=0/IC=0 100 (pF) (mA) C 30 Ta=25℃ 10 Cob 10 COMMON EMITTER VCE=1V 0.4 0.6 fT 0.8 —— 1.0 VBE 1 0.1 1.2 REVERSE VOLTAGE IC PC 350 300 100 30 10 3 3 1 0.3 (V) COLLECTOR POWER DISSIPATION PC (mW) 1000 (MHz) 30 3 3 BASE-EMMITER VOLTAGE fT CAPACITANCE IC COLLCETOR CURRENT Ta=100℃ 100 1 0.2 TRANSITION FREQUENCY Ta=25℃ Cib 300 1000 1500 300 —— V 10 20 (V) Ta 300 250 200 150 100 50 VCE=10V Ta=25℃ 1 0 1 3 COLLECTOR CURRENT www.jscj-elec.com 30 10 IC 100 0 (mA) 25 50 75 AMBIENT TEMPERATURE 2 100 Ta 125 150 (℃ ) Rev. - 2.1 SOT-23 Package Outline Dimensions Symbol A A1 A2 b c D E E1 e e1 L L1 θ Dimensions In Millimeters Min Max 0.900 1.150 0.000 0.100 0.900 1.050 0.300 0.500 0.080 0.150 2.800 3.000 1.200 1.400 2.250 2.550 0.950 TYP 1.800 2.000 0.550 REF 0.300 0.500 0° 8° Dimensions In Inches Min Max 0.035 0.045 0.000 0.004 0.035 0.041 0.012 0.020 0.003 0.006 0.110 0.118 0.047 0.055 0.089 0.100 0.037 TYP 0.071 0.079 0.022 REF 0.012 0.020 0° 8° SOT-23 Suggested Pad Layout NOTICE JSCJ reserves the right to make modifications,enhancements,improvements,corrections or other changes without further notice to any product herein. JSCJ does not assume any liability arising out of the application or use of any product described herein. www.jscj-elec.com 3 Rev. - 2.1 SOT-23 Tape and Reel www.jscj-elec.com 4 Rev. - 2.1